Kioxia and SanDisk are fully embarking on the mass production of next-generation NAND flash. The two companies have begun mass production of 10th-generation 3D NAND flash memory at Fab2 (K2) of their Kitakami plant in Iwate Prefecture, Japan, further strengthening their production infrastructure to respond to the expansion of the artificial intelligence (AI) and data center markets.

Official Announcement of 10th-Generation 3D NAND Mass Production

On the 3rd (local time), the two companies officially announced the start of 10th-generation 3D flash memory production at Fab2 of the Kitakami plant in Japan. Along with the commencement of production, a K2 facility opening event was also held, unveiling plans to expand next-generation memory production.

The K2 plant has been continuously expanding its production system since it began producing 8th-generation 3D NAND flash last year. With the mass production of the 10th-generation product, its supply capacity for next-generation high-performance memory has been significantly enhanced. Both generations feature the application of CMOS Direct Bonded Array (CBA) technology, which increases data processing performance and storage capacity while simultaneously reducing power consumption.

State-of-the-Art Plant Equipped with Earthquake Preparedness, AI Production Management, and Scalability

The latest technologies were incorporated into Fab2 from the initial plant design stage. A structure mitigating seismic shocks was applied, and energy-efficient manufacturing equipment along with an AI-based production management system were introduced to improve production efficiency. The utilization of interior cleanroom space was also improved, allowing for the future expansion of production facilities.

Joint Venture Extended Through End of 2034… Partnership Continuing for 25 Years

The two companies recently decided to extend their joint investment agreement until the end of 2034. Based on their partnership of over 25 years, the strategy is to continuously strengthen large-scale production capabilities and technological competitiveness to maintain a competitive edge in the global NAND flash market.

Koichi Shibayama, President and CEO of Kioxia Iwate, stated, "It is significant that we are starting the production of advanced 10th-generation flash memory at the Kitakami plant," adding, "Based on our 8th-generation and 10th-generation products, we will respond to the expanding AI market and achieve sustainable growth."

Alper Ilkbahar, Chief Technology Officer (CTO) of SanDisk, said, "The production of 10th-generation 3D NAND flash is an important milestone for both companies," and noted, "As demand for high-performance flash memory increases, centered around AI and data centers, we will stably supply customers with state-of-the-art NAND technology."

Surge in Demand for High-Capacity, High-Speed Storage Driven by the Spread of Generative AI

The industry expects that as demand for high-capacity, high-speed storage rapidly increases due to the proliferation of generative AI and hyperscale data centers, Kioxia and SanDisk's expansion of next-generation NAND mass production will play a crucial role in strengthening global memory supply competitiveness.

The two companies plan to continue the joint development of 3D NAND flash and facility investments, consistently driving memory technology innovation tailored for the AI era.

[This article was written with the assistance of AI. This article is not intended to solicit investment, and the final decision and responsibility for investments lie solely with the investor.]