ASML and TSMC are launching an industry-wide transition to expand the photomask standard for High NA EUV from the current 6 inches to 12 inches in order to boost productivity in next-generation semiconductor fine processing. On the 8th, the two companies announced a joint initiative for the transition to larger photomasks aimed at enhancing the value of High NA EUV lithography.

From 6 Inches to 12 Inches… Expectations of Improved Productivity and Cost Reduction

The core of this collaboration is enlarging the size of photomasks used in semiconductor manufacturing to 12 inches. High NA EUV will initially be applied to mass production using existing 6-inch masks, but the companies believe that a future transition to the 12-inch standard will help increase fab productivity and lower chip manufacturing costs.

The adoption of larger photomasks is also significant in resolving stitching constraints. The explanation is that advanced semiconductor manufacturers will be able to utilize the performance of High NA EUV more broadly, which could serve as a foundation for improving the economics of cutting-edge chip production.

Pilot Line in 2031… Deployment in Advanced Nodes in 2033

Ahead of the annual SPIE BACUS conference in Monterey, California on the 7th, the two companies formed an industry-wide joint initiative to pursue the transition to 12-inch photomasks.

A specific timeline was also presented. The plan is to build a 12-inch mask pilot line by 2031 and, based on this, prepare for 12-inch High NA lithography systems to enter advanced node production by 2033.

TSMC to Begin High NA Mass Production in 2030… AI Semiconductors as the Driver

TSMC's schedule for adopting High NA EUV was also disclosed. TSMC plans to use ASML's High NA technology for mass production of advanced nodes starting in 2030. TSMC expects that as process miniaturization continues, the number of layers requiring High NA EUV will increase. The increasingly complex transistor structures demanded by artificial intelligence (AI) semiconductors were cited as a key factor driving the expansion of processes adopting High NA EUV.

ASML CEO Christophe Fouquet predicted that the adoption of High NA EUV will gradually increase in line with the semiconductor miniaturization roadmap. He explained that existing 6-inch masks will be utilized initially, with 12-inch masks later supporting them to boost scanner productivity. He projected that this will enable the industry to meet demand for smaller, faster, and more energy-efficient semiconductors.

TSMC Chairman and CEO C.C. Wei emphasized that industry-wide collaboration is essential to solving the complex problems of the semiconductor industry. The idea is to combine technologies and expertise across the value chain to lower the cost barriers of advanced technology and enable its application to large-scale production.

Expansion Beyond the Two Companies to the Ecosystem… Attention on Supply Chain Technology Transition

This move may not remain limited to a technology partnership between ASML and TSMC but could spread across the entire semiconductor ecosystem. According to the two companies, companies adopting High NA EUV as well as major semiconductor ecosystem partners and suppliers have expressed interest in joining the initiative. As a result, the 12-inch photomask transition is likely to require new technological changes not only in High NA EUV equipment but across the entire related supply chain, including mask manufacturing, materials, and inspection and metrology.

Whether the schedule of TSMC's application of High NA EUV to mass production in 2030, the construction of a 12-inch mask pilot line in 2031, and deployment in advanced processes in 2033 becomes reality is expected to be a major variable in the future competition over semiconductor fine processing.

[This article was written with AI assistance based on official materials released by ASML and TSMC on September 8, 2026. Future technology development schedules, mass production application timing, and the scope of participating companies may change depending on R&D and industry conditions. It is not intended as a forecast of any company's stock price or as investment advice. The final investment decision and responsibility rest with the investor.]